Fabrication of a ferromagnetic inductor core and capacitor electrode in a single photo mask step

ABSTRACT

An integrated circuit capacitor having a bottom plate  50   a , a dielectric layer  250 ′, and a ferromagnetic top plate  20   a . Also, a method of manufacturing an integrated circuit on a semiconductor wafer. The method comprising forming a bottom plate of a capacitor  50   a  and a bottom portion of an induction coil  50   a , forming an etch stop layer  250 ′, forming a ferromagnetic capacitor top plate  20   a  and a ferromagnetic core  20   b , forming a top portion of the induction coil  50   b  plus vias  50   c  that couple the top portion of the induction coil  50   b  to the bottom portion of the induction coil  50   c.

BACKGROUND OF THE INVENTION

This invention is directed to integrated circuit capacitors, inductorsand transformers, and a method of fabricating them.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view of a toroidal inductor with a ferromagnetic core inaccordance with the present invention.

FIG. 2 is a three-dimensional view of a portion of the toroidal inductorof FIG. 1.

FIG. 3 is a top view of a toroidal inductor with a ferromagnetic core inaccordance with another embodiment of the present invention.

FIG. 4 is a top view of a solenoid with a ferromagnetic core inaccordance with the present invention.

FIG. 5 is a top view of a nested toroidal inductor with a ferromagneticcore in accordance with the present invention.

FIG. 6 is a top view of a transformer with a ferromagnetic core inaccordance with the present invention.

FIG. 7 is a top view of a transformer with a ferromagnetic core inaccordance with another embodiment of the present invention.

FIG. 8 is a cross-section view of a partial integrated circuit inaccordance with the present invention.

FIG. 9 is a cross-section view of a partial integrated circuit inaccordance with another embodiment of the present invention.

FIGS. 10A-10J are cross-sectional diagrams of a process for formingferromagnetic capacitors, inductors, and transformers, in accordancewith the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention is described with reference to the attachedfigures, wherein like reference numerals are used throughout the figuresto designate similar or equivalent elements. The figures are not drawnto scale and they are provided merely to illustrate the instantinvention. Several aspects of the invention are described below withreference to example applications for illustration. It should beunderstood that numerous specific details, relationships, and methodsare set forth to provide a full understanding of the invention. Oneskilled in the relevant art, however, will readily recognize that theinvention can be practiced without one or more of the specific detailsor with other methods. In other instances, well-known structures oroperations are not shown in detail to avoid obscuring the invention. Thepresent invention is not limited by the illustrated ordering of acts orevents, as some acts may occur in different orders and/or concurrentlywith other acts or events. Furthermore, not all illustrated acts orevents are required to implement a methodology in accordance with thepresent invention.

Referring to the drawings, FIG. 1 is a top view of a toroidal inductor10 with a ferromagnetic core 20 in accordance with the presentinvention. The toroidal inductor 10 is a three dimensional inductorhaving an induction coil 30 that wraps around a ferromagnetic core 10numerous times. Only the ferromagnetic core 20, the bottom portion ofthe induction coil 30 a and top portion of the induction coil 30 b canbe seen from the top view shown in FIG. 1.

FIG. 2 is a three-dimensional view of a portion (as indicated in FIG. 1)of the toroidal inductor 10. This view illustrates the parallel bottominduction coils 30 a and the diagonal top induction coils 30 b of thisexample application. FIG. 2 also shows the vias 30 c that physically andelectrically connect the bottom induction coils 30 a to the topinduction coils 30, thereby creating the inductor coil helix around theinductor core 20.

The invention is not limited to the induction coil layout shown in FIGS.1 and 2. Rather, it is within the scope of the invention to haveinduction coils of any suitable shape. For example, FIG. 3 illustrates atoroidal inductor 40 having “L” shaped bottom induction coils 50 a andtop induction coils 50 b.

Furthermore, it is within the scope of the invention to create variousinductor configurations. For example, a solenoid 60 (FIG. 4) or a nestedtoroidal inductor 70 (FIG. 5) are within the scope of the invention.Furthermore, a transformer 80, 90 (FIGS. 6 and 7 respectively) havingprimary coils 100 and secondary coils 110 are also within the scope ofthe invention. Preferably, the ferromagnetic core 20 of the transformers80, 90 contains at least one slot 62, 72, or partial slot 64, to blockthe flow of eddy currents (thereby increasing the efficiency of thetransformer). Moreover, any inductor configuration (i.e. 10, 40, 60, 70)may incorporate a slotted ferromagnetic core 20. Preferably, the slotsformed within the core are thin—as thin as 30 nm; however, these slotsmay be up to 500 nm thick.

FIG. 8 is a cross-section view of a portion of an integrated circuit 200in accordance with the present invention. In general, an integratedcircuit fabrication or process flow is divided into two parts: thefabrication of the Front-End-Of-Line (FEOL) structure 120 and thefabrication of the Back-End-Of-Line (BEOL) structure 130. The structurethat includes the silicon substrate 140 is called the FEOL structure 120of the integrated circuit 200. The FEOL structure 120 is often calledthe “transistor layer”. The example portion of FEOL 120 shown in FIG. 8includes a transistor having a gate oxide 150, a gate electrode 160, andsource/drain 170; however, it is within the scope of the invention tohave any form of logic within the FEOL structure 120.

Immediately above the transistor is a layer of dielectric insulation 180containing metal contacts 190 that electrically tie the transistor tothe other logic elements (not shown) of the FEOL structure 120. Thedielectric insulation 180 may be any suitable material such as SiO₂. Thecontacts 190 may be comprised of any suitable conductive material suchas W.

The BEOL 130 contains a single damascene metal interconnect layer 210and at least one dual damascene metal interconnect layer 220, 230.Layers 210, 220 and 230 contain metal lines 50 that properly routeelectrical signals and power properly through the electronic device.

The metal lines 50 of the single damascene metal interconnect layer 210are electrically insulated by dielectric material 240. The metal lines50 may be comprised of any suitable conductive material, such as Cu, Ta,Ti, Au, Mg, Ag, Sn, Al, or even alloys of Cu with metals like Mg, Ag,Sn, Al, etc. The dielectric material 240 may be any low-k insulativematerial such as fluorinated silica glass (“FSG”) or organo-silicateglass (“OSG”). In addition, the single damascene metal interconnectlayer 210 may have a thin dielectric layer 250 formed between thedielectric material 240 and the FEOL 120. Any suitable material may beused for the thin dielectric layer 250. For example, the thin dielectriclayer 250 may comprise SiC, SiCN, SiCO, or Si₃N₄.

The thin dielectric layer 250 may perform many functions. For example,it may function as a diffusion barrier layer by preventing the copper inmetal lines 50 from diffusing to the silicon channel of the transistoror to another isolated metal line (thereby creating an electricalshort). Second, the thin dielectric layer 250 may function as anetch-stop when manufacturing the metal lines 50 within the dielectricinsulation material 240. Lastly, the thin dielectric layer 250 mayfunction as an adhesion layer to help hold a layer of dielectric 240 tothe FEOL 120 or to the dual damascene layer 220. For purposes ofreadability, the thin dielectric layer 250 will be called the etch stoplayer 250 during the rest of the description of this invention.

The dual damascene metal interconnect layers 220 and 230 contain metalinterconnects and vias 50 that are electrically insulated by dielectricmaterial 240. As with the single damascene metal interconnect layer 210,the metal lines 50 of the dual damascene metal interconnect layers 220,230 may contain any metal, such as Cu. However, the use of other metalssuch as Ta, Ti, Au, Mg, Ag, Sn, Al, or alloys of Cu (with metals likeMg, Ag, Sn, Al, etc.) is within the scope of this invention. Thedielectric material 240 of the dual damascene layers 220, 230 may alsobe OSG, FSG, any low-k film, or any ultra low-k film. The dual damascenelayers 220, 230 preferably contain dielectric etch stop layers 250. Anysuitable dielectric material, such as SiC, SiCN, SiCO, or Si₃N₄ may beused as the etch-stop layers 250 for the dual damascene metalinterconnect layers 220, 230.

It is within the scope of the invention to fabricate an integratedcircuit 200 with one or more single damascene metal interconnect layers210 and/or one or more dual damascene metal interconnect layers 220,230. A protective overcoat 260 is usually formed over the last metalinterconnect layer to provide an oxygen and moisture barrier. Anysuitable material may be used for the protective overcoat 260, such asSiO₂ or SiN.

In accordance with the present invention, one of the metal interconnectlayers 230 of the integrated circuit 200 contains a layer offerromagnetic material 20 that is used to form both a capacitor topplate 20 a and an induction coil 20 b for an inductor or transformer.Also in accordance with the invention, the ferromagnetic capacitor topplate 20 a is formed in the same mask step as the ferromagneticinduction core 20 b, as described more fully below. The ferromagneticlayer 20 is preferably comprised of Co. However it is within the scopeof the invention to use any suitable ferromagnetic material, such as Ni,Fe, or ferromagnetic alloys.

The example capacitor shown in FIG. 8 (i.e. in the upper right quadrant)is comprised of the copper bottom plate 50 a located within metalinterconnect layer 220, a portion of the etch stop layer 250 (thatserves as the capacitor dielectric), and the ferromagnetic top plate 20a. The capacitor of the present invention takes the place of the planarmetal-insulator-metal (MIM) capacitor that is often used in BEOLstructures 130. It is to be noted that vias 50 c and a metal line 50 belectrically connect the capacitor to other logic elements (not shown)of the FEOL structure 120.

The example inductor shown in FIG. 8 (i.e. in the upper left quadrant)is a portion of the inductor shown in FIG. 3. Therefore, the exampleinductor shown in FIG. 8 has “L” shaped induction coils 50 a, 50 b.However, the example inductor shown in FIG. 8 could also be a portion ofthe solenoid of FIG. 4, the nested inductor of FIG. 5, or thetransformer of FIG. 6. The example inductor shown in FIG. 8 is comprisedof the copper “L” shaped bottom portion of an induction coil 50 alocated within metal interconnect layer 220, the insulated ferromagneticcore 20 b located within metal interconnect layer 230, and the copper“L” shaped top portion of an induction coil 50 a located within metalinterconnect layer 230.

It is to be noted that the inductor or transformer of the presentinvention does not need to be formed in two consecutive metalinterconnect layers (as shown in FIG. 8). Rather, the inductor ortransformer may be formed within three or more sequential metalinterconnect layers, as shown in FIG. 9. If the inductor or transformeris formed within three or more sequential metal interconnect layers thenit is within the scope of the invention to add additional ferromagneticcores 20 b, as also shown in FIG. 9.

FIGS. 10A-10J are cross-sectional diagrams of a process for formingferromagnetic capacitors, inductors, and transformers, within anintegrated circuit 280 in accordance with the present invention. Thepresent invention may be used in any integrated circuit configuration;therefore the first step is to fabricate the front-end structure 120 tocreate any logic elements necessary to perform the desired integratedcircuit function, as shown in FIG. 10A. In addition, because the examplemanufacturing process will form the ferromagnetic capacitors, inductors,and transformers in the two dual damascene metal interconnect layers220, 230; the single damascene layer 210 of the BEOL 130 is fabricatedover the FEOL 120 using current manufacturing processes.

Next, a etch-stop layer 250 for the metal interconnect layer 220 isformed over the entire semiconductor wafer 140 (i.e. over the metalinterconnect layer 210). The etch-stop layer 250 may be formed using anymanufacturing process such as Plasma-Enhanced Chemical Vapor Deposition(“PECVD”). In this example application, the etch-stop layer 250 iscomprised of SiC; however, other dielectric materials such as SiCN,SiCO, or Si₃N₄ may be used.

Next a low-k dielectric layer 240 is formed over the entire wafer (i.e.over the etch-stop layer 250). The low-k dielectric material may beapplied to the substrate with a Chemical Vapor Deposition (“CVD”) or aspin-on manufacturing process. In the example application, thedielectric layer 240 is an OSG film. However, any other low-k dielectric(e.g. k<3.0), or a combination or stack of low-k dielectric materials,may be used (such as FSG, or an ultra low-k film (e.g. k<2.5)).

Referring now to FIG. 10B, a standard photoresist pattern and etchprocess (described more fully below) is used to form the holes for themetal lines 50—including the bottom plate 50 a of the capacitor and the“L” shaped bottom portion 50 a of the example induction coil. In theexample application a layer of copper is deposited over the entiresemiconductor wafer 140 and then the top of the copper layer is polished(using standard manufacturing processes) to form both the bottom portionof the induction coil and the bottom plate of the capacitor, as shown inFIG. 10B. Note that a part of the “L” shape of the example bottominduction coil 50 a extends away from the plane of the drawing figure.This is indicated by the dashed line and is marked 50 a′ (and similarlymarked in FIG. 8).

As shown in FIG. 10C, the etch-stop layer 250′ for the next metalinterconnect layer 230 is now formed over the entire semiconductor wafer140 (i.e. over the metal interconnect layer 220). This etch-stop layer250′ is preferably SiN and is preferably deposited by a PECVD process.However, other suitable materials or processes may be used. The portionof this etch stop layer 250′ that is coupled to the bottom plate 50 a ofthe capacitor will be the dielectric for the capacitor once thefabrication of the metal interconnect layer 230 is complete.

In accordance with the invention, a layer of ferromagnetic material 20is now deposited over the etch stop layer 250′, as shown in FIG. 1C. Theferromagnetic material 20 is preferably Co; however the use of otherferromagnetic materials are within the scope of the invention. Forexample, the ferromagnetic layer 20 may be comprised of Ni, Fe, or anyferromagnetic alloy. Moreover, it is within the scope of the inventionto form a laminated ferromagnetic layer in order to reduce eddycurrents. The layer of Co ferromagnetic material 20 in the exampleapplication may be deposited by any suitable process, but it ispreferably deposited with a PECVD process using a standard machine (suchas the Endura which is manufactured by Applied Materials).

Also in accordance with the invention, a single mask step is now used tocreate the top plate 20 a of the capacitor and a core 20 b that isproximate to the bottom portion of the induction coil 50 a. A layer ofphotoresist 270 is applied (FIG. 10D) and then patterned by a standardlithography and anisotropic etch process (FIG. 10E) to create a templatefor etching the ferromagnetic layer 20 to form ferromagnetic structures20 a, 20 b.

As shown in FIG. 10F, the ferromagnetic layer is now etched, forming thetop plate 20 a of the capacitor and a slotted core 20 b that isproximate to the bottom portion of the induction coil 50 a. Any suitableprocess may be used to etch the ferromagnetic layer 20. Preferably, theferromagnetic layer 20 is etched with a plasma etch process using a DPSmetal etcher (made by Applied Materials). Once the ferromagnetic layer20 has been etched, the photoresist is removed by a standard ash processplus an optional wet clean.

In the example application, shown in FIG. 10G, a second etch stop layer250 is now deposited. However, the use of this second etch stop layer isoptional. If used, this second etch stop layer 250 provides increasedselectivity during the etch of the dielectric layer (which is formed innext step), thereby providing increased control over the spacing betweenthe core 20 b and the top portion of the induction coil 50 b. In theexample application, the second etch stop layer 250 of the metalinterconnect layer 230 is comprised of SiC and is deposited by a PECVDprocess. However, other suitable materials or processes may be used.

Referring to FIG. 10H, the dielectric 240 of the metal interconnectlayer 230 is now formed over the semiconductor wafer 140 (in thisexample it is formed over the optional second etch stop layer 250). Inthe example application, the dielectric layer 240 is a low-k materialsuch as OSG, or FSG. However, any suitable dielectric material may beused. In addition, the dielectric layer may be formed using any standardprocess, such as CVD.

Using a standard photoresist pattern and etch process, the dielectriclayer 240 is etched to create voids for the deposition of the conductivematerial that will form metal lines 50 within the metal interconnectlayer 230—including the top portion of the induction coil, the vias thatcouple the top portion and bottom portion of the induction coil, and themetal lines and vias of the capacitor. In the “via-first” process of theexample application, a layer of photoresist is applied and patterned forthe via structures 50 c. Then holes for the vias 50 c are etched usingany well-known manufacturing process such as fluorocarbon-based plasmaetch with a reactive ion etch (“RIE”) machine. When the etch process iscomplete the photoresist is removed by an ash process plus an optionalwet clean. Next, another layer of photoresist is applied and patternedfor the “trench” structures 50 b. Then holes for the trenches 50 b areetched using any well-known manufacturing process such asfluorocarbon-based plasma etch with a RIE machine. When the etch processis complete the photoresist is removed by an ash process plus anoptional wet clean. FIG. 101 shows the integrated circuit 280 at thisstage of the fabrication process.

The top portion of the induction coil 50 b, the vias 50 c that couplethe top portion of the induction coil 50 b to the bottom portion of theinduction coil 50 a, the metal line 50 b for the capacitor, the vias 50c that connect the capacitor to other logic elements, other metalinterconnects 50 b, and other vias 50 c are now formed. In the exampleapplication the metal lines are copper. The copper metal lines areformed by depositing a copper seed layer and then a applying layer ofcopper material 50 over the semiconductor substrate through a standardtechnique such as electro-chemical deposition (“ECD”). The copper layer50 is then polished until the top surface of the dielectric 240 isexposed and the copper features 50 b, 50 c are formed (see FIG. 10J).The polish step is performed with a Chemical Mechanical Polish (“CMP”)process; however, other manufacturing techniques may be used. Note thata part of the “L” shape of the example top induction coil 50 b and theassociated via 50 c is formed parallel to—yet offset from—the plane ofthe drawing figure. This is indicated by the dashed line and is marked50 b′ and 50 c′ (and similarly marked in FIG. 8).

Now the fabrication of the integrated circuit 280 continues usingstandard manufacturing techniques until the fabrication of theelectronic device is complete. For example, additional dual damascenelayers of the back-end structure 130 may now be fabricated using eitherstandard manufacturing techniques or the techniques of the presentinvention. After the last dual damascene layer is complete, a protectiveovercoat layer 260 (see FIG. 8) is commonly formed over thesemiconductor wafer. Then bond pads are created, the integrated circuitis tested, cut from the semiconductor wafer, and then packaged.

Various modifications to the invention as described above are within thescope of the claimed invention. As an example, the induction coils 50 a,50 b, 50 c, and the capacitor plates 50 a, 20 a may be any shape orsize. In addition, the top capacitor plate 20 a may be a different sizeand shape than the bottom capacitor plate 50 a, plus the top portion ofthe induction coil 50 b may be a different shape than the bottom portionof the induction coil 50 a. Furthermore, the ferromagnetic material 20may be used to create a thin-film resistor 20 c, as shown in FIG. 9(i.e. in the upper right quadrant), during the mask steps (i.e. FIGS.10D-10F) that create the capacitor top plate 10 a and the inductor core10 b.

Instead of the via first fabrication process described above, a “trenchfirst” process may be used. If a trench first process is used then theholes for the trenches 50 b are etched in the dielectric layer 240before the holes for the vias 50 c are etched.

During the formation of the copper features 50, a thin barrier film maybe deposited in the holes in the dielectric layer 240 before thedeposition of the copper layer 50. This barrier film may be comprised ofany suitable material such as TaN and may be deposited by a PVD process.The metal seed layer may be any suitable material such as copper and maybe deposited by a PVD process.

Instead of using positive photoresist as described above, negativephotoresist may be used. In addition, a layer of anti-reflective coatingmay be applied before the layer of photoresist is applied. Furthermore,a cap layer may be formed over the dielectric layer 19 to serve as ahard mask during the etch of the vias and trenches or serve as a stoplayer for CMP process. Moreover, it is within the scope of the inventionto have a back-end structure 130 with a different amount orconfiguration of metal layers 210, 220, 230 than is shown in FIGS. 8 and9.

The semiconductor substrate in the example application includes asemiconductor crystal, typically silicon. However, other semiconductorssuch as GaAs and InP may be used. In addition to a semiconductorcrystal, the substrate 140 may include various elements therein and/orlayers thereon. These can include metal layers, barrier layers,dielectric layers, device structures, active elements and passiveelements including word lines, source regions, drain regions, bit lines,bases, emitters, collectors, conductive lines, conductive vias, etc.Moreover, the invention is applicable to other semiconductortechnologies such as BiCMOS, bipolar, SOI, strained silicon,pyroelectric sensors, opto-electronic devices, microelectricalmechanical system (“MEMS”), or SiGe.

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only, and not limitation. Numerous changes to the disclosedembodiments can be made in accordance with the disclosure herein withoutdeparting from the spirit or scope of the invention. Thus, the breadthand scope of the present invention should not be limited by any of theabove described embodiments. Rather, the scope of the invention shouldbe defined in accordance with the following claims and theirequivalents.

1-22. (canceled)
 23. An integrated circuit capacitor comprising: abottom plate; a dielectric coupled to said bottom plate; and a top platecoupled to said dielectric, said top plate having ferromagneticmaterial.
 24. The integrated circuit of claim 23 wherein said bottomplate comprises Cu.
 25. The integrated circuit of claim 23 wherein saiddielectric is a portion of an etch stop layer of a BEOL structure.